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Wafer-scale single-crystalline β-Ga2O3 thin film on SiC substrate by ion-cutting technique with hydrophilic wafer bonding at elevated temperatures

Crossref DOI link: https://doi.org/10.1007/s40843-022-2187-2

Published Online: 2022-09-30

Published Print: 2023-02

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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