Transition metal (TM = V, Cr, Mn, Fe, Co, Ni)-doped GeSe diluted magnetic semiconductor thin films with high-temperature ferromagnetism
Crossref DOI link: https://doi.org/10.1007/s40843-023-2657-2
Published Online: 2023-12-08
Published Print: 2024-01
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Li, Deren
Zhang, Xi
He, Wenjie
Peng, Yong
Xiang, Gang
Text and Data Mining valid from 2023-12-08
Version of Record valid from 2023-12-08
Article History
Received: 5 September 2023
Accepted: 20 October 2023
First Online: 8 December 2023
Ethics
: <b>Conflict of interest</b> The authors declare that they have no conflict of interest.