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Deep-level defects and carrier manipulation in Sn-doped β-Ga2O3 (100) single crystals

Published Online: 2025-06-04

Published Print: 2025-07

Authors

Yao, Jiahao

Liu, Yiyuan

Fang, Zhaoxuan

Wang, Zhengpeng

Sun, Na

Gong, Hehe

Mu, Wenxiang

Jia, Zhitai

Tao, Xutang

Ren, Fangfang

Gu, Shulin

Zhang, Rong

Ye, Jiandong
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Text and Data Mining valid from 2025-06-04

Version of Record valid from 2025-06-04
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Article History

Received: 27 February 2025

Accepted: 4 May 2025

First Online: 4 June 2025

Ethics

: Conflict of interest The authors declare that they have no conflict of interest.

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