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Selective area growth of high-quality in-plane InAs nanowires and nanowire networks by molecular-beam epitaxy on Ge substrates

Crossref DOI link: https://doi.org/10.1007/s40843-025-4043-3

Published Online: 2026-03-10

Published Print: 2026-04

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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