Effect of gate dielectric on the performance of ISFET with SU-8 encapsulation
Crossref DOI link: https://doi.org/10.1007/s41683-018-0023-5
Published Online: 2018-04-16
Published Print: 2018-05
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Dawnee, S.
Bhat, Navakanta
Text and Data Mining valid from 2018-04-16
Article History
Received: 2 November 2017
Revised: 30 January 2018
Accepted: 6 April 2018
First Online: 16 April 2018