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Fast and energy-efficient resistive switching in ZrOx/TaOx bilayer structures under ultra-low voltage operation for next-generation memory applications

Crossref DOI link: https://doi.org/10.1007/s42114-026-01695-w

Published Online: 2026-03-03

Published Print: 2026-04

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Lee, Min Kyung

Jeong, Jae-Seung

Jung, Jaeho

Seo, Hyun Kyu

Shin, Changhwan

Kim, Gun Hwan

Yang, Min Kyu
Funding

Funding for this research was provided by:

National Research Foundation of Korea (RS-2025-02654040)

Ministry of Science and ICT, South Korea (2024-00399394)
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Text and Data Mining valid from 2026-03-03

Version of Record valid from 2026-03-17
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Article History

Received: 3 November 2025

Revised: 6 February 2026

Accepted: 11 February 2026

First Online: 3 March 2026

Declarations

:

: The authors declare no competing interests.

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