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Introducing a buried pure silicon layer in SOI-MESFET transistor to increase the breakdown voltage by modifying carriers and electric field distribution

Crossref DOI link: https://doi.org/10.1007/s42247-023-00471-6

Published Online: 2023-02-20

Published Print: 2023-04

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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