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Bipolar resistive switching behavior and endurance in RF-sputtered bilayer HfO2/ZrO2 resistive random access memory

Published Online: 2023-11-08

Published Print: 2023-12

Authors

Lata, Lalit Kumar https://orcid.org/0000-0001-8685-5867
Jain, Praveen Kumar
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Text and Data Mining valid from 2023-11-08

Version of Record valid from 2023-11-08
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Article History

Received: 14 July 2023

Accepted: 27 October 2023

First Online: 8 November 2023

Declarations

:

: The authors declare no competing interests.

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