Low-Temperature-Processed SiInZnO Thin-Film Transistor Fabricated by Radio Frequency Magnetron Sputtering
Crossref DOI link: https://doi.org/10.1007/s42341-018-0042-8
Published Online: 2018-04-16
Published Print: 2018-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Kim, Byoung Keun
Lee, Sang Yeol
Text and Data Mining valid from 2018-04-16
Article History
Received: 28 December 2017
Revised: 20 February 2018
Accepted: 24 February 2018
First Online: 16 April 2018