Si Surface Passivation by Atomic Layer Deposited Al2O3 with In-Situ H2O Prepulse Treatment
Crossref DOI link: https://doi.org/10.1007/s42341-019-00126-6
Published Online: 2019-07-03
Published Print: 2019-08
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Kim, Hogyoung
Choi, Byung Joon
Funding for this research was provided by:
Seoul National University of Science and Technology (2019-0370)
Text and Data Mining valid from 2019-07-03
Version of Record valid from 2019-07-03
Article History
Received: 15 April 2019
Revised: 7 June 2019
Accepted: 29 June 2019
First Online: 3 July 2019