Effect of RF Sputtering Power on the Electrical Properties of Si–In–Zn–O Thin Film Transistors
Crossref DOI link: https://doi.org/10.1007/s42341-019-00142-6
Published Online: 2019-09-09
Published Print: 2019-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Byun, Jae Min
Lee, Sang Yeol http://orcid.org/0000-0002-6351-2156
Text and Data Mining valid from 2019-09-09
Version of Record valid from 2019-09-09
Article History
Received: 29 April 2019
Revised: 29 April 2019
Accepted: 5 September 2019
First Online: 9 September 2019