Lanthanum Doped Zirconium Oxide (LaZrO2) High-k Gate Dielectric FinFET SRAM Cell Optimization
Crossref DOI link: https://doi.org/10.1007/s42341-021-00296-2
Published Online: 2021-03-13
Published Print: 2021-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Kaur, Gurpurneet http://orcid.org/0000-0001-9061-2964
Gill, Sandeep Singh
Rattan, Munish
Text and Data Mining valid from 2021-03-13
Version of Record valid from 2021-03-13
Article History
Received: 8 July 2020
Revised: 1 February 2021
Accepted: 15 February 2021
First Online: 13 March 2021