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A Large Signal GaN HEMT Transistor Based on the Angelov Model Parameters Extraction Applied to Single Stage Low Noise Amplifier

Crossref DOI link: https://doi.org/10.1007/s42341-022-00390-z

Published Online: 2022-03-18

Published Print: 2022-12

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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