Crossmark

Design and Analysis of Novel Heterodielectric Double Metal(DM)-Triple Gate-Tunnel Field-Effect Transistors(FET): A Path to Ultra-Low Power Implementations

Crossref DOI link: https://doi.org/10.1007/s42341-024-00550-3

Published Online: 2024-06-03

Published Print: 2024-12

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Geege, A. Sharon

Samuel, T. S. Arun

Vimala, P.

Kumar, T. Ananth https://orcid.org/0000-0002-0494-7803
License Information

Text and Data Mining valid from 2024-06-03

Version of Record valid from 2024-06-03
More Information

Article History

Received: 11 January 2024

Revised: 8 May 2024

Accepted: 18 May 2024

First Online: 3 June 2024

Declarations

:

: The authors declare no conflict of interest.

Document is current

Any future updates will be listed below