Retraction Note: Exploring High-Temperature Reliability of 4H-SiC MOSFETs: A Comparative Study of High-K Gate Dielectric Materials
Crossref DOI link: https://doi.org/10.1007/s42341-024-00562-z
Published Online: 2024-08-01
Published Print: 2024-10
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Ganeswara Rao, M. V.
Ramanjaneyulu, N.
Madugula, Sumalatha
Dharani, N. P.
Rajesh Babu, K.
Sagar, Kallepelli
Text and Data Mining valid from 2024-08-01
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Article History
First Online: 1 August 2024
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