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Modeling and Simulation of Nanometer Al-Doped Dual Channel Double Material Gate MgZnO/ZnO HEMT for High-Frequency Applications

Crossref DOI link: https://doi.org/10.1007/s42341-025-00667-z

Published Online: 2025-08-17

Published Print: 2026-06

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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