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Analysis of Static and Dynamic Characteristics of 1.2 kV 4H-SiC Trench MOSFETs with Trenched P-Source and Buried P+ Layers

Published Online: 2025-01-18

Published Print: 2025-02

Authors

Kang, Gyuhyeok

Park, Yeongeun

Seok, Ogyun https://orcid.org/0000-0003-2015-1300
Funding

Funding for this research was provided by:

Ministry of Trade, Industry and Energy (20022501)

IC Design Education Center
License Information

Text and Data Mining valid from 2025-01-18

Version of Record valid from 2025-01-18
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Article History

Received: 4 October 2024

Revised: 17 December 2024

Accepted: 19 December 2024

First Online: 18 January 2025

Declarations

:

: Gyuhyeok Kang, Yeongeun Park and Ogyun Seok declare that we have no competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.

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