Crossmark

Designing of Cylindrical Surrounding Double-Gate MOSFETs at Nanotechnology Scale from Double-Gate MOSFETs: Advancements of Silicon Semiconductor Devices

Crossref DOI link: https://doi.org/10.1007/s42835-026-02589-z

Published Online: 2026-01-30

Published Print: 2026-03

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Gowthaman, Naveenbalaji

Srivastava, Viranjay M. https://orcid.org/0000-0001-5231-7403
License Information

Text and Data Mining valid from 2026-01-30

Version of Record valid from 2026-01-30
More Information

Article History

Received: 9 May 2025

Revised: 12 December 2025

Accepted: 8 January 2026

First Online: 30 January 2026

Declarations

:

: Not applicable.

: Not applicable.

: All authors have read and agreed to the published version of the manuscript.

: The authors declare no conflict of interest.

Document is current

Any future updates will be listed below