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Numerical analysis and optimization of horizontal MOCVD reactor design parameters for uniform GaN thin films

Published Online: 2026-03-31

Authors

Kim, Haneul

Chung, Roy Byung Kyu

Ko, Hyunseok https://orcid.org/0000-0002-1891-6194
Funding

Funding for this research was provided by:

Korea Evaluation Institute of Industrial Technology (RS-2024-00420281)

Ministry of Trade, Industry and Energy (RS-2025-15373147)
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Text and Data Mining valid from 2026-03-31

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Article History

Received: 30 October 2025

Revised: 24 January 2026

Accepted: 28 February 2026

First Online: 31 March 2026

Declarations

:

: The authors declare that they have no conflict of interest.

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