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600 V p-type gate-doped enhancement mode gallium nitride-based transistors for AC-to-DC power factor-corrected rectifiers operating at 200 kHz

Crossref DOI link: https://doi.org/10.1007/s43236-022-00461-7

Published Online: 2022-05-23

Published Print: 2022-07

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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