Investigation of TCADs Models for Characterization of Sub 16 nm In $$_{0.53}$$ Ga $$_{0.47}$$ As FinFET
Crossref DOI link: https://doi.org/10.1007/978-981-10-7470-7_28
Published Online: 2017-12-21
Published Print: 2017
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Pathak, J.
Darji, A.
License valid from 2017-01-01