Computing Surface Potential and Drain Current in Nanometric Double-Gate MOSFET Using Ortiz-Conde Model
Crossref DOI link: https://doi.org/10.1007/978-981-13-1540-4_5
Published Online: 2018-10-02
Published Print: 2019
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Roy, Krishnendu
Chowdhury, Anal Roy
Deyasi, Arpan
Sarkar, Angsuman
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