Comparative Studies on the Performance Parameters of a P-Channel Tunnel Field Effect Transistor Using Different Channel Materials for Low-Power Digital Application
Crossref DOI link: https://doi.org/10.1007/978-981-13-1540-4_6
Published Online: 2018-10-02
Published Print: 2019
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Goswami, Jayabrata
Ganguly, Anuva
Ghosal, Anirudhha
Banerjee, J. P.
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