Nonvolatile Ferroelectric Memory Thin-Film Transistors Using a Poly(Vinylidene Fluoride Trifluoroethylene) Gate Insulator and an Oxide Semiconductor Active Channel
Crossref DOI link: https://doi.org/10.1007/978-981-15-1212-4_12
Published Online: 2020-03-24
Published Print: 2020
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Yoon, Sung-Min
Text and Data Mining valid from 2020-01-01
Chapter History
First Online: 24 March 2020