Nonvolatile Field-Effect Transistors Using Ferroelectric-Doped HfO2 Films
Crossref DOI link: https://doi.org/10.1007/978-981-15-1212-4_4
Published Online: 2020-03-24
Published Print: 2020
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Schroeder, Uwe
Slesazeck, Stefan
Mulaosmanovic, Halid
Mikolajick, Thomas
Text and Data Mining valid from 2020-01-01
Chapter History
First Online: 24 March 2020