Investigation of increased removal rate during polishing of single-crystal silicon carbide
Crossref DOI link: https://doi.org/10.1007/s00170-015-7023-4
Published Online: 2015-04-22
Published Print: 2015-10
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Tsai, M. Y.
Wang, S. M.
Tsai, C. C.
Yeh, T. S.
Text and Data Mining valid from 2015-04-22