Growth and interfacial properties of atomic layer deposited Al0.7Ti0.3O y high-k dielectric on Ge substrate
Crossref DOI link: https://doi.org/10.1007/s00339-014-8579-9
Published Online: 2014-06-28
Published Print: 2014-11
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Lu, Hong-Liang
Xie, Zhang-Yi
Geng, Yang
Zhang, Yuan
Sun, Qing-Qing
Wang, Peng-Fei
Ding, Shi-Jin
Zhang, David Wei
Text and Data Mining valid from 2014-06-28