Enhancement of device performance by using quaternary capping over ternary capping in strain-coupled InAs/GaAs quantum dot infrared photodetectors
Crossref DOI link: https://doi.org/10.1007/s00339-014-8854-9
Published Online: 2014-12-11
Published Print: 2015-02
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Tongbram, B.
Shetty, S.
Ghadi, H.
Adhikary, S.
Chakrabarti, S.
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