Gate drain-overlapped-asymmetric gate dielectric-GAA-TFET: a solution for suppressed ambipolarity and enhanced ON state behavior
Crossref DOI link: https://doi.org/10.1007/s00339-016-0510-0
Published Online: 2016-10-21
Published Print: 2016-11
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Madan, Jaya
Chaujar, Rishu http://orcid.org/0000-0002-0161-8449
License valid from 2016-10-21