Double exponential I–V characteristics and double Gaussian distribution of barrier heights in (Au/Ti)/Al2O3/n-GaAs (MIS)-type Schottky barrier diodes in wide temperature range
Crossref DOI link: https://doi.org/10.1007/s00339-016-0558-x
Published Online: 2016-11-19
Published Print: 2016-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Güçlü, Çiğdem Ş.
Özdemir, Ahmet Faruk
Altindal, Şemsettin
License valid from 2016-11-19