Selective lift-off of GaN light-emitting diode from a sapphire substrate using 266-nm diode-pumped solid-state laser irradiation
Crossref DOI link: https://doi.org/10.1007/s00339-016-9928-7
Published Online: 2016-03-07
Published Print: 2016-04
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Kim, Jaegu
Kim, Jae-Hyun
Cho, Sung-Hak
Whang, Kyung-Hyun
Funding for this research was provided by:
Korea Institute of Machinery and Materials (SC1170)
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