Electrical and carrier transport properties of the Au/Y2O3/n-GaN metal-insulator-semiconductor (MIS) diode with rare-earth oxide interlayer
Crossref DOI link: https://doi.org/10.1007/s00339-017-0894-5
Published Online: 2017-03-27
Published Print: 2017-04
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Venkata Prasad, C.
Rajagopal Reddy, V.
Choi, Chel-Jong
License valid from 2017-03-27