A vacancy-modulated self-selective resistive switching memory with pronounced nonlinear behavior
Crossref DOI link: https://doi.org/10.1007/s00339-017-1350-2
Published Online: 2017-11-03
Published Print: 2017-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Ma, Haili
Feng, Jie
Gao, Tian
Zhu, Xi
Text and Data Mining valid from 2017-11-03
Article History
Received: 31 July 2017
Accepted: 27 October 2017
First Online: 3 November 2017