Temperature-dependent field-effect carrier mobility in organic thin-film transistors with a gate SiO2 dielectric modified by H2O2 treatment
Crossref DOI link: https://doi.org/10.1007/s00339-018-1597-2
Published Online: 2018-01-25
Published Print: 2018-02
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Lin, Yow-Jon
Hung, Cheng-Chun
Funding for this research was provided by:
Ministry of Science and Technology, Taiwan (106-2112-M-018-001-MY3)
Text and Data Mining valid from 2018-01-25
Article History
Received: 5 November 2017
Accepted: 17 January 2018
First Online: 25 January 2018