Activation of dopant in silicon by ion implantation under heating sample at 200 °C
Crossref DOI link: https://doi.org/10.1007/s00339-018-1656-8
Published Online: 2018-02-09
Published Print: 2018-03
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Sameshima, Toshiyuki
Yasuta, Keisuke
Hasumi, Masahiko
Nagao, Tomokazu
Inouchi, Yutaka
Text and Data Mining valid from 2018-02-09
Article History
Received: 27 November 2017
Accepted: 5 February 2018
First Online: 9 February 2018