Temperature and SiO2/4H-SiC interface trap effects on the electrical characteristics of low breakdown voltage MOSFETs
Crossref DOI link: https://doi.org/10.1007/s00339-019-2606-9
Published Online: 2019-04-04
Published Print: 2019-05
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Bencherif, H.
Dehimi, L.
Pezzimenti, F. http://orcid.org/0000-0002-8410-0142
Corte, F. G. Della
Text and Data Mining valid from 2019-04-04
Version of Record valid from 2019-04-04
Article History
Received: 30 January 2019
Accepted: 31 March 2019
First Online: 4 April 2019