Physics-based analytic modeling and simulation of gate-induced drain leakage and linearity assessment in dual-metal junctionless accumulation nano-tube FET (DM-JAM-TFET)
Crossref DOI link: https://doi.org/10.1007/s00339-020-03520-7
Published Online: 2020-04-15
Published Print: 2020-05
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Goel, Anubha
Rewari, Sonam
Verma, Seema
Gupta, R. S.
Text and Data Mining valid from 2020-04-15
Version of Record valid from 2020-04-15
Article History
Received: 24 November 2019
Accepted: 31 March 2020
First Online: 15 April 2020