Impact of HfO2 buffer layer on the electrical characteristics of ferroelectric/high-k gate stack for nonvolatile memory applications
Crossref DOI link: https://doi.org/10.1007/s00339-020-03632-0
Published Online: 2020-05-25
Published Print: 2020-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Jha, Rajesh Kumar http://orcid.org/0000-0002-5903-8105
Singh, Prashant
Kashniyal, Upendra
Goswami, Manish
Singh, B. R.
Text and Data Mining valid from 2020-05-25
Version of Record valid from 2020-05-25
Article History
Received: 15 January 2020
Accepted: 14 May 2020
First Online: 25 May 2020