Frequency and temperature dependence of dielectric properties and capacitance–voltage in GO/TiO2/n-Si MOS device
Crossref DOI link: https://doi.org/10.1007/s00339-020-03729-6
Published Online: 2020-06-23
Published Print: 2020-07
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Ashery, A.
Gad, S. A. http://orcid.org/0000-0001-8273-2413
Shaban, H.
Text and Data Mining valid from 2020-06-23
Version of Record valid from 2020-06-23
Article History
Received: 23 March 2020
Accepted: 15 June 2020
First Online: 23 June 2020