Analysis of 4H-SiC MOSFET with distinct high-k/4H-SiC interfaces under high temperature and carrier-trapping conditions
Crossref DOI link: https://doi.org/10.1007/s00339-020-03850-6
Published Online: 2020-10-13
Published Print: 2020-11
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Bencherif, H. http://orcid.org/0000-0001-6936-605X
Pezzimenti, F.
Dehimi, L.
Della Corte, F. G.
Text and Data Mining valid from 2020-10-13
Version of Record valid from 2020-10-13
Article History
Received: 26 May 2020
Accepted: 24 July 2020
First Online: 13 October 2020