Implementation of linearly modulated work function AσB1−σ gate electrode and Si0.55Ge0.45 N+ pocket doping for performance improvement in gate stack vertical-TFET
Crossref DOI link: https://doi.org/10.1007/s00339-020-04065-5
Published Online: 2020-10-20
Published Print: 2020-11
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Wadhwa, Girish
Singh, Jeetendra http://orcid.org/0000-0003-4810-7950
Text and Data Mining valid from 2020-10-20
Version of Record valid from 2020-10-20
Article History
Received: 20 August 2020
Accepted: 8 October 2020
First Online: 20 October 2020