BiFeO3/Al2O3 gate stack for metal-ferroelectric-insulator-silicon memory FET for IoT applications
Crossref DOI link: https://doi.org/10.1007/s00339-020-04203-z
Published Online: 2021-01-03
Published Print: 2021-01
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Tripathi, Pramod Narayan
Ojha, Sanjeev Kumar
Nazarov, Alexey
Text and Data Mining valid from 2021-01-01
Version of Record valid from 2021-01-01
Article History
Received: 7 August 2020
Accepted: 8 December 2020
First Online: 3 January 2021
Compliance with ethical standards
:
: There is no conflicts of interest.