Design considerations and electro-mechanical simulation of an inertial sensor based on a floating gate metal-oxide semiconductor field-effect transistor as transducer
Crossref DOI link: https://doi.org/10.1007/s00542-014-2274-9
Published Online: 2014-07-25
Published Print: 2015-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Abarca Jiménez, G. S.
Reyes Barranca, M. A.
Mendoza Acevedo, S.
Munguía Cervantes, J. E.
Alemán Arce, M. A.
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