Development of high temperature resistant of 500 °C employing silicon carbide (3C-SiC) based MEMS pressure sensor
Crossref DOI link: https://doi.org/10.1007/s00542-014-2353-y
Published Online: 2014-10-30
Published Print: 2015-02
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Marsi, Noraini
Majlis, Burhanuddin Yeop
Hamzah, Azrul Azlan
Mohd-Yasin, Faisal
Text and Data Mining valid from 2014-10-30
Version of Record valid from 2014-10-30
Article History
Received: 8 September 2014
Accepted: 25 September 2014
First Online: 30 October 2014