A 22 nm FinFET based 6T-SRAM cell design with scaled supply voltage for increased read access time
Crossref DOI link: https://doi.org/10.1007/s10470-015-0547-6
Published Online: 2015-04-28
Published Print: 2015-07
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Manju, I.
Senthil Kumar, A.
Text and Data Mining valid from 2015-04-28