Wideband high-isolation SPDT RF switch in 0.18- $$\upmu$$ μ m SiGe BiCMOS technology
Crossref DOI link: https://doi.org/10.1007/s10470-016-0701-9
Published Online: 2016-02-11
Published Print: 2016-04
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Ha, Byeong Wan
Seo, Chang Won
Cho, Choon Sik
Kim, Young-Jin
Text and Data Mining valid from 2016-02-11