Influence of Band Tailing on Photo- and Electroluminescence Polarization of m-Plane InGaN/GaN Quantum Well Heterostructures
Crossref DOI link: https://doi.org/10.1007/s10812-016-0211-7
Published Online: 2016-01-18
Published Print: 2016-01
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Lutsenko, E. V.
Rzheutski, M. V.
Pavlovskii, V. N.
Alyamani, A.
Aljohenii, M.
Aljerwii, A.
Mauder, C.
Reuters, B.
Kalisch, H.
Heuken, M.
Vescan, A.
Text and Data Mining valid from 2016-01-01