A full-range dual material gate tunnel field effect transistor drain current model considering both source and drain depletion region band-to-band tunneling
Crossref DOI link: https://doi.org/10.1007/s10825-014-0649-x
Published Online: 2014-12-20
Published Print: 2015-03
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Pandey, Pratyush
Vishnoi, Rajat
Kumar, M. Jagadesh
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