Physics-based simulation of 4H-SIC DMOSFET structure under inductive switching
Crossref DOI link: https://doi.org/10.1007/s10825-015-0766-1
Published Online: 2015-11-18
Published Print: 2016-03
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Pushpakaran, Bejoy N. http://orcid.org/0000-0002-1342-5951
Bayne, Stephen B.
Ogunniyi, Aderinto A.
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