Role of annealing temperature in the oxide charge distribution in high- $$\kappa $$ κ -based MOS devices: simulation and experiment
Crossref DOI link: https://doi.org/10.1007/s10825-016-0829-y
Published Online: 2016-05-21
Published Print: 2016-09
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Biswas, Debaleen
Chakraborty, Ayan
Chakraborty, Supratic
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